Loss of TBX3 enhances pancreatic progenitor generation from human pluripotent stem cells.

Tbx3 has been identified as a regulator of liver development in the mouse, but its function in human liver development remains unknown. TBX3 mutant human pluripotent stem cell (PSC) lines were generated using CRISPR/Cas9 genome editing. TBX3 loss led to impaired liver differentiation and an upregulation of pancreatic gene expression, including PDX1, during a hepatocyte differentiation protocol. Other pancreatic genes, including NEUROG3 and NKX2.2, displayed more open chromatin in the TBX3 mutant hepatoblasts. Using a pancreatic differentiation protocol, cells lacking TBX3 generated more pancreatic progenitors and had an enhanced pancreatic gene expression signature at the expense of hepatic gene expression. These data highlight a potential role of TBX3 in regulating hepatic and pancreatic domains during foregut patterning, with implications for enhancing the generation of pancreatic progenitors from PSCs.

Generation of human control iPSC line CHOPi004-A from juvenile foreskin fibroblast cells.

The CHOPWT4 iPSC line was generated as a control for applications such as differentiation analyses to the three germ layers and derivative tissues. Human foreskin fibroblasts were reprogrammed using the non-integrating Sendai virus expressing Oct3/4, Sox2, c-myc, and Klf4.

GATA6 suppression enhances lung specification from human pluripotent stem cells.

The transcription factor GATA6 has been shown to be important for lung development and branching morphogenesis in mouse models, but its role in human lung development is largely unknown. Here, we studied the role of GATA6 during lung differentiation using human pluripotent stem cells. We found that the human stem cell lines most efficient at generating NKX2.1+ lung progenitors express lower endogenous levels of GATA6 during endoderm patterning and that knockdown of GATA6 during endoderm patterning increased the generation of these cells. Complete ablation of GATA6 resulted in the generation of lung progenitors displaying increased cell proliferation with up to a 15-fold expansion compared with control cells, whereas the null cell line displayed a defect in further development into mature lung cell types. Furthermore, transgenic expression of GATA6 at the endoderm anteriorization stage skewed development toward a liver fate at the expense of lung progenitors. Our results suggest a critical dosage effect of GATA6 during human endoderm patterning and a later requirement during terminal lung differentiation. These studies offer an approach of modulating GATA6 expression to enhance the production of lung progenitors from human stem cell sources.

Is CH3NH3PbI3 Polar?

In view of the continued controversy concerning the polar/nonpolar nature of the hybrid perovskite system, CH3NH3PbI3, we report the first investigation of a time-resolved pump-probe measurement of the second harmonic generation efficiency as well as using its more traditional form as a sensitive probe of the absence/presence of the center of inversion in the system both in its excited and ground states, respectively. Our results clearly show that SHG efficiency, if nonzero, is below the limit of detection, strongly indicative of a nonpolar or centrosymmetric structure. Our results on the same samples, based on temperature dependent single crystal X-ray diffraction and P-E loop measurements, are entirely consistent with the above conclusion of a centrosymmetric structure for this compound in all three phases, namely the high temperature cubic phase, the intermediate temperature tetragonal phase and the low temperature orthorhombic phase. It is important to note that all our experimental probes are volume averaging and performed on bulk materials, suggesting that basic material properties of CH3NH3PbI3 are consistent with a centrosymmetric, nonpolar structure.

Room temperature nanoscale ferroelectricity in magnetoelectric GaFeO3 epitaxial thin films.

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric gallium ferrite. Piezoforce measurements show a 180° phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in the thin films. Further, temperature-dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magnetodielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier but also give rise to the observed ferroelectricity, making gallium ferrite a unique single phase multiferroic.

Effects of site disorder, off-stoichiometry and epitaxial strain on the optical properties of magnetoelectric gallium ferrite.

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical properties of magnetoelectric gallium ferrite. Optical properties (bandgap, refractive indices and dielectric constants) were experimentally obtained by performing ellipsometric studies over the energy range 0.8-4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data were compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO(3) arises primarily from O 2p-Fe 3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site disorder in the experimentally derived strained GaFeO(3) films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe 3d states leading to a lowered bandgap of the material.

Probing magnetoelastic coupling and structural changes in magnetoelectric gallium ferrite.

Temperature dependent x-ray diffraction and Raman spectroscopic studies were carried out on flux-grown single crystals of gallium ferrite with a Ga:Fe ratio of 0.9:1.1. Site occupancy calculations from the Rietveld refinement of the x-ray data led to an estimated magnetic moment of ~0.60 µ(B)/f.u. which was in good agreement with the experimental data. A combination of these two measurements indicates that there is no structural phase transition in the material between 18 and 700 K. A detailed line shape analysis of the Raman mode at ~374 cm(-1) revealed a discontinuity in the peak position data indicating the presence of spin-phonon coupling in gallium ferrite. A correlation of the peak frequency with the magnetization data led to two distinct regions across a temperature ~180 K with appreciable change in the spin-phonon coupling strength from ~0.9 (T < 180 K) to 0.12 cm(-1) (180 K < T < T(c)). This abrupt change in the coupling strength at ~180 K strongly suggests an altered spin dynamics across this temperature.

Electronic structure, Born effective charges and spontaneous polarization in magnetoelectric gallium ferrite.

We present a theoretical study of the structure-property correlation in gallium ferrite, based on first-principles calculations followed by a subsequent comparison with experiments. The local spin density approximation (LSDA + U) of the density functional theory has been used to calculate the ground state structure, electronic band structure, density of states and Born effective charges. The calculations reveal that the ground state structure is orthorhombic Pc 2(1)n having A-type antiferromagnetic spin configuration, with lattice parameters matching well with those obtained experimentally. Plots of the partial density of states of constituent ions exhibit noticeable hybridization of Fe 3d, Ga 4s, Ga 4p and O 2p states. However, the calculated charge density and electron localization function show a largely ionic character of the Ga/Fe-O bonds which is also supported by a lack of any significant anomaly in the calculated Born effective charges with respect to the corresponding nominal ionic charges. The calculations show a spontaneous polarization of ∼ 59 µC cm( - 2) along the b-axis which is largely due to asymmetrically placed Ga1, Fe1, O1, O2 and O6 ions.